Evaluation of TaN as the Wet Etch Stop Layer during the...

ECS Transactions 2013 / 08 Vol. 58; Iss. 6

Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations

Cui, H., Xu, J., Gao, J., Xiang, J., Lu, Y., Tang, Z., He, X., Li, T., Luo, J., Wang, X., Tang, B., Yu, J., Yang, T., Yan, J., Li, J., Zhao, C.
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Volume:
58
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/05806.0111ecst
Date:
August, 2013
File:
PDF, 294 KB
english, 2013
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