Si-Based Single-Dopant Atom Devices

Advanced Materials Research 2011 / 4 Vol. 222

Si-Based Single-Dopant Atom Devices

Tabe, Michiharu, Moraru, Daniel, Udhiarto, Arief, Miki, Sakito, Anwar, Miftahul, Kawai, Yuya, Mizuno, Takeshi
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Volume:
222
Language:
english
Journal:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/AMR.222.205
Date:
April, 2011
File:
PDF, 403 KB
english, 2011
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