[ECS 22nd Symposium on Microelectronics Technology and Devices - Rio De Janiero, Brasil (September 3 - September 6, 2007)] ECS Transactions - The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs
Der Agopian, Paula G., Martino, Joao A., Simoen, E., Claeys, C.Volume:
9
Year:
2007
Language:
english
DOI:
10.1149/1.2766901
File:
PDF, 192 KB
english, 2007