High-Power Characteristics of GaN/InGaN Double...

MRS Proceedings 2003 / 1 Vol. 798

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kumakura, Kazuhide
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Volume:
798
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-798-Y7.4
Date:
January, 2003
File:
PDF, 123 KB
english, 2003
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