Sub-30 nm FinFETs with Schottky-Barrier Source/Drain...

MRS Proceedings 2007 / 1 Vol. 995

Sub-30 nm FinFETs with Schottky-Barrier Source/Drain Featuring Complementary Metal Silicides and Fully-Silicided Gate for P-FinFETs

Lee, Rinus Tek Po, Tan, Kian-Ming, Liow, Tsung-Yang, Lim, Andy Eu-Jin, Lo, Guo-Qiang, Samudra, Ganesh S., Chi, Dong-Zhi, Yeo, Yee-Chia
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Volume:
995
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0995-G05-17
Date:
January, 2007
File:
PDF, 1003 KB
english, 2007
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