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The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure
Kuo, Po-Yi, Huang, Yan-Syue, Lue, Yi-Hsien, Chao, Tien-Sheng, Lei, Tan-FuVolume:
157
Year:
2010
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3258283
File:
PDF, 1.53 MB
english, 2010