Experiments and Modeling of Si-Ge Interdiffusion with...

ECS Journal of Solid State Science and Technology 2014 / 07 Vol. 3; Iss. 10

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Dong, Y., Mooney, P. M., Cai, F., Anjum, D., Ur-Rehman, N., Zhang, X., (Maggie) Xia, G.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
3
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0041410jss
Date:
July, 2014
File:
PDF, 1.22 MB
english, 2014
Conversion to is in progress
Conversion to is failed