Growth of High Quality 4H-SiC Crystals in Controlled...

Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals

Tsuge, Hiroshi, Sato, Shinya, Katsuno, Masakazu, Fujimoto, Tatsuo, Ohashi, Wataru
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.13
Date:
May, 2012
File:
PDF, 314 KB
english, 2012
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