Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy
Zhou, Kun, Liu, Jianping, Ikeda, Masao, Zhang, Shuming, Li, Deyao, Zhang, Liqun, Zeng, Chang, Yang, HuiVolume:
416
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2015.01.030
Date:
April, 2015
File:
PDF, 4.15 MB
english, 2015