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Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
Nakao, H., Mikami, Hideno, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, TakashiVolume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1293
File:
PDF, 289 KB
english, 2006