Characterization of 4H-SiC MOSFETs Formed on the Different...

Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Nakao, H., Mikami, Hideno, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1293
File:
PDF, 289 KB
english, 2006
Conversion to is in progress
Conversion to is failed