Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate

Materials Science Forum 2014 / 2 Vol. 778-780

Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate

Alassaad, Kassem, Soulière, Veronique, Doisneau, Beatrice, Cauwet, François, Peyre, Herve, Carole, Davy, Chaussende, Didier, Ferro, Gabriel
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.187
Date:
February, 2014
File:
PDF, 1.61 MB
english, 2014
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