Group III nitrides grown on 4H-SiC (3038) substrate by...

MRS Proceedings 2004 / 1 Vol. 831

Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy

Honshio, Akira, Kitano, Tsukasa, Imura, Masataka, Miyake, Yasuto, Kasugai, Hideki, Iida, Kazuyoshi, Kawashima, Takeshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Kinoshita, Hi
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Volume:
831
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-831-E11.31
Date:
January, 2004
File:
PDF, 87 KB
english, 2004
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