Features of Semi-Insulating SiC Single-Crystal Growth by...

Materials Science Forum 2001 Vol. 353-356

Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport

Reshanov, Sergey A., Rastegaev, V.P., Tairov, Yuri M.
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Volume:
353-356
Year:
2001
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.353-356.53
File:
PDF, 364 KB
2001
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