[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Excimer Laser(NLA) Processes

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