Homoepitaxial growth and characterization of thick SiC...

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Jikimoto, T., Miyanagi, T., Nakamura, T., Izumi, K.
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Volume:
815
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-815-J2.1
Date:
January, 2004
File:
PDF, 1.89 MB
english, 2004
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