Stable Phosphorus Passivated SiO2/4H-SiC Interface Using...

Materials Science Forum 2014 / 10 Vol. 806

Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides

Sharma, Yogesh K., Ahyi, A.C., Issacs-Smith, Tamara, Jennings, M.R., Thomas, S.M., Mawby, P., Dhar, S., Williams, John R.
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Volume:
806
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.806.139
Date:
October, 2014
File:
PDF, 262 KB
english, 2014
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