1/f Noise in Graphene Field-Effect Transistors: Dependence...

1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area

Liu, Guanxiong, Rumyantsev, Sergey, Stillman, William, Shur, Michael, Balandin, Alexander A.
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Volume:
1344
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2011.1357
Date:
January, 2011
File:
PDF, 245 KB
english, 2011
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