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Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping
Li, J. Z., Hydrick, J. M., Park, J. S., Li, J., Bai, J., Cheng, Z. Y., Carroll, M., Fiorenza, J. G., Lochtefeld, A., Chan, W., Shellenbarger, Z.Volume:
156
Year:
2009
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3129463
File:
PDF, 479 KB
english, 2009