Study of the Effects of Growth Rate, Miscut Direction and...

Materials Science Forum 2013 / 1 Vol. 740-742

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

Camarda, Massimo, Canino, Andrea, Fiorenza, Patrick, Severino, Andrea, Anzalone, Ruggero, Privitera, Stefania, La Magna, Antonino, La Via, Francesco, Vecchio, Carmelo, Mauceri, Marco, Litrico, Grazia,
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.229
Date:
January, 2013
File:
PDF, 1.45 MB
english, 2013
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