Finite Element Modeling of Silicon Transport into Germanium...

Defect and Diffusion Forum 2011 / 4 Vol. 312-315

Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique

Mechighel, Farid, El Ganaoui, Mohammed, Pateyron, Bernard, Kadja, Mahfoud, Dost, S.
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Volume:
312-315
Language:
english
Journal:
Defect and Diffusion Forum
DOI:
10.4028/www.scientific.net/DDF.312-315.240
Date:
April, 2011
File:
PDF, 568 KB
english, 2011
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