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High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon
Choi, Sangmoo, Jeon, Sanghun, Cho, Myungjun, Hwang, HyunsangVolume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.L102
Date:
February, 2003
File:
PDF, 490 KB
english, 2003