High-k Gate Dielectric Prepared by Low-Temperature Wet...

Japanese Journal of Applied Physics 2003 / 2 Vol. 42; Iss. Part 2, No

High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon

Choi, Sangmoo, Jeon, Sanghun, Cho, Myungjun, Hwang, Hyunsang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.L102
Date:
February, 2003
File:
PDF, 490 KB
english, 2003
Conversion to is in progress
Conversion to is failed