Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
Ivanov, Pavel A., Levinshtein, Michael E., Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Das, Mrinal K., Hull, Brett A.Volume:
556-557
Year:
2007
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.556-557.921
File:
PDF, 349 KB
english, 2007