Effect of Back-Channel Plasma Etching on the Leakage...

Japanese Journal of Applied Physics 2000 / 3 Vol. 39; Iss. Part 1, No

Effect of Back-Channel Plasma Etching on the Leakage Current of a-Si:H Thin Film Transistors

Yi, Chung, Rhee, Shi-Woo, Park, Sae-Hwan, Ju, Jin-Ho
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.1051
Date:
March, 2000
File:
PDF, 243 KB
english, 2000
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