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Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications
Pi-Chun Juan, Trevor, Liu, Yu-WeiVolume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3581202
File:
PDF, 1.69 MB
english, 2011