MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by...

Materials Science Forum 2000 Vol. 338-342

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Bassler, M., Pensl, Gerhard
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Volume:
338-342
Year:
2000
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1109
File:
PDF, 361 KB
2000
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