Oxygen-Doped Molybdenum Films for MOS Gate Application

Oxygen-Doped Molybdenum Films for MOS Gate Application

Ohfuji, Shin-ichi
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Volume:
131
Year:
1984
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2115602
File:
PDF, 768 KB
english, 1984
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