EngineeringVO, CiOiand CiCsdefects in irradiated Si through Ge and Pb doping
Londos, C. A., Angeletos, T., Sgourou, E. N., Chroneos, A.Volume:
26
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-015-2677-0
Date:
April, 2015
File:
PDF, 479 KB
english, 2015