Improved performance of 4H–SiC MESFETs with Γ-gate and...

Superlattices and Microstructures 2015 / 09 Vol. 85

Improved performance of 4H–SiC MESFETs with Γ-gate and recessed p-buffer layer

Jia, Hujun, Zhang, Hang, Xing, Ding, Ma, Peimiao
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Volume:
85
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2015.05.040
Date:
September, 2015
File:
PDF, 910 KB
english, 2015
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