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A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk, Haupt, Christian, Kiefer, Rudolf, Brückner, Peter, Seelmann-Eggebert, Matthias, Tessmann, Axel, Mikulla, Michael, Kallfass, Ingmar, Quay, RüdigerVolume:
4
Language:
english
Journal:
International Journal of Microwave and Wireless Technologies
DOI:
10.1017/s1759078712000177
Date:
June, 2012
File:
PDF, 700 KB
english, 2012