Design principles of tuning oxygen vacancy diffusion in...

Journal of Materials Chemistry C 2015 Vol. 3; Iss. 16

Design principles of tuning oxygen vacancy diffusion in SrZrO 3 for resistance random access memory

Guo, Zhonglu, Zhu, Linggang, Zhou, Jian, Sun, Zhimei
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Volume:
3
Year:
2015
Language:
english
Journal:
J. Mater. Chem. C
DOI:
10.1039/c5tc00302d
File:
PDF, 2.47 MB
english, 2015
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