High temperature performance of recessed gate GaN MESFETs...

Electronics Letters 2000 Vol. 36; Iss. 3

High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Lee, Won Sang, Choi, Yoon Ho, Chung, Ki Woong, Moon, Dong Chan, Shin, Moo Whan
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Volume:
36
Year:
2000
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20000215
File:
PDF, 388 KB
english, 2000
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