Ultrasound influence on I–V–T characteristics of silicon Schottky barrier structure
Olikh, O. Ya., Voytenko, K. V., Burbelo, R. M.Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4906844
Date:
January, 2015
File:
PDF, 1.91 MB
english, 2015