Simulation of Phase-Change Random Access Memory with...

Chinese Physics Letters 2008 / 09 Vol. 25; Iss. 9

Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

Yue-Feng, Gong, Yun, Ling, Zhi-Tang, Song, Song-Lin, Feng
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Volume:
25
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307x/25/9/097
Date:
September, 2008
File:
PDF, 595 KB
english, 2008
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