Rapid thermal oxidation of silicon with different thermal...

Semiconductor Science and Technology 1995 / 07 Vol. 10; Iss. 7

Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: Influence on surface microroughness and electrical characteristics

Filho, S G dos Santos, Hasenack, C M, Lopes, M C V, Baranauskas, V
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Volume:
10
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/10/7/015
Date:
July, 1995
File:
PDF, 134 KB
english, 1995
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