Pulsed I – V measurement method to obtain hysteresis-free characteristics of graphene FETs
Park, Jun-Mo, Lee, Dongho, Shim, Jeoyoung, Jeon, Taehan, Eom, Kunsun, Park, Byung-Gook, Lee, Jong-HoVolume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/9/095006
Date:
September, 2014
File:
PDF, 439 KB
english, 2014