Photoluminescence properties of InAs nanowires grown on...

Nanotechnology 2010 / 08 Vol. 21; Iss. 33

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates

Sun, M H, Leong, E S P, Chin, A H, Ning, C Z, Cirlin, G E, Samsonenko, Yu B, Dubrovskii, V G, Chuang, L, Chang-Hasnain, C
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Volume:
21
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/21/33/335705
Date:
August, 2010
File:
PDF, 540 KB
english, 2010
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