A novel 10-nm physical gate length double-gate junction field effect transistor
Xiao-Yu, Hou, Ru, Huang, Gang, Chen, Sheng, Liu, Xing, Zhang, Bin, Yu, Yang-Yuan, WangVolume:
17
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/17/2/054
Date:
February, 2008
File:
PDF, 659 KB
english, 2008