![](/img/cover-not-exists.png)
The electrical characteristics of a 4H—silicon carbide metal—insulator—semiconductor structure with Al 2 O 3 as the gate dielectric
Liu, Li, Yang, Yin-Tang, Ma, Xiao-HuaVolume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/12/127204
Date:
December, 2011
File:
PDF, 112 KB
english, 2011