Comparison of the formation process and properties of...

Chinese Physics B 2012 / 03 Vol. 21; Iss. 3

Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H—SiC substrates

Wang, Dang-Chao, Zhang, Yu-Ming, Zhang, Yi-Men, Lei, Tian-Min, Guo, Hui, Wang, Yue-Hu, Tang, Xiao-Yan, Wang, Hang
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Volume:
21
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/21/3/038102
Date:
March, 2012
File:
PDF, 159 KB
english, 2012
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