Capacitance–voltage characterization of fully silicided gated MOS capacitor
Baomin, Wang, Guoping, Ru, Yulong, Jiang, Xinping, Qu, Bingzong, Li, Ran, LiuVolume:
30
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/30/3/034002
Date:
March, 2009
File:
PDF, 737 KB
english, 2009