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A novel 2-T structure memory device using a Si nanodot for embedded application
Yang, Xiaonan, Wang, Yong, Zhang, Manhong, Huo, Zongliang, Liu, Jing, Zhang, Bo, Liu, MingVolume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/12/124007
Date:
December, 2011
File:
PDF, 659 KB
english, 2011