GaAs-based long-wavelength InAs bilayer quantum dots grown...

Journal of Semiconductors 2011 / 08 Vol. 32; Iss. 8

GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

Zhu, Yan, Li, Mifeng, He, Jifang, Yu, Ying, Ni, Haiqiao, Xu, Yingqiang, Wang, Juan, He, Zhenhong, Niu, Zhichuan
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Volume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/8/083001
Date:
August, 2011
File:
PDF, 864 KB
english, 2011
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