A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect
Kumar Pati, Sudhansu, Koley, Kalyan, Dutta, Arka, Mohankumar, N, Kumar Sarkar, ChandanVolume:
34
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/34/11/114002
Date:
November, 2013
File:
PDF, 1.59 MB
english, 2013