DC and RF characteristics of enhancement-mode InAlN/GaN...

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

Song, Xubo, Gu, Guodong, Dun, Shaobo, Lü, Yuanjie, Han, Tingting, Wang, Yuangang, Xu, Peng, Feng, Zhihong
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Volume:
35
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/35/4/044002
Date:
April, 2014
File:
PDF, 152 KB
english, 2014
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