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Stability of strained quantum-well field-effect transistor structures
Peercy, P.S., Dodson, B.W., Tsao, J.Y., Jones, E.D., Myers, D.R., Zipperian, T.E., Dawson, L.R., Biefeld, R.M., Klem, J.F., Hills, C.R.Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.20415
Date:
December, 1988
File:
PDF, 353 KB
english, 1988