[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - A stacked capacitor with an MOCVD-(Ba,Sr)TiO/sub 3/ film and a RuO/sub 2//Ru storage node on a TiN-capped plug for 4 Gbit DRAMs and beyond
Yamaguchi, H., Iizuka, T., Koga, H., Takemura, K., Sone, S., Yabuta, H., Yamamichi, S., Lesaicherre, P., Suzuki, M., Kojima, Y., Nakajima, K., Kasai, N., Sakuma, T., Kato, Y., Miyasaka, Y., Yoshida, MYear:
1996
Language:
english
DOI:
10.1109/iedm.1996.554071
File:
PDF, 588 KB
english, 1996