[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High power, high AlGaN/GaN-HEMTs with novel powerbar design
Lossy, R., Liero, A., Wurfl, J., Trankle, G.Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609413
File:
PDF, 352 KB
english, 2005