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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability

Asenov, A., Cheng, B., Wang, X., Brown, A. R., Reid, D., Millar, C., Alexander, C.
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Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724741
File:
PDF, 1.13 MB
english, 2013
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