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[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs
Shulaker, Max M., Wu, Tony F., Pal, Asish, Zhao, Liang, Nishi, Yoshio, Saraswat, Krishna, Wong, H.-S. Philip, Mitra, SubhasishYear:
2014
Language:
english
DOI:
10.1109/iedm.2014.7047120
File:
PDF, 4.34 MB
english, 2014