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[IEEE 2014 IEEE 26th International Symposium on Power...

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[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Wu, Jia Woei, Chowdhury, Sauvik, Hitchcock, Collin, Lu, James J.-Q., Chow, T. Paul, Kim, Woochan, Ngo, Khai
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Year:
2014
Language:
english
DOI:
10.1109/ispsd.2014.6855984
File:
PDF, 1.21 MB
english, 2014
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