[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding
Wu, Jia Woei, Chowdhury, Sauvik, Hitchcock, Collin, Lu, James J.-Q., Chow, T. Paul, Kim, Woochan, Ngo, KhaiYear:
2014
Language:
english
DOI:
10.1109/ispsd.2014.6855984
File:
PDF, 1.21 MB
english, 2014